MRF8S19260HSR6分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ =

1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability

on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW (1)

Output Power (3 dB Input Overdrive from Rated Pout)

• Typical Pout @ 1 dB Compression Point ≃ 245 Watts CW

Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S-Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.