N-Channel Enhancement-Mode Lateral MOSFET

文件：584.85 Kbytes 页数：14 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：584.85 Kbytes 页数：14 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

文件：584.85 Kbytes 页数：14 Pages

恩XP

2110-2170 MHz，16 W 平均值，28 V W-CDMA，LTE射频功率LDMOS

The MRF8HP21080HR3 and MRF8HP21080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Advanced High Performance In-Package Doherty\n• Production Tested in a Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD ;

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W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V

The MRF8HP21080HR3 and MRF8HP21080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Advanced High Performance In-Package Doherty\n• Production Tested in a Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD ;

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