MRF7S35015HSR3中文资料3100-3500 MHz, 15 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview The MRF7S35015HSR3 is designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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特性 Features

•Typical Pulsed Performance: VDD = 32 Volts, IDQ = 50 mA, Pout = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
Power Gain: 16 dB
\tDrain Efficiency: 41%

•Typical WiMAX Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain: 18 dB
\tDrain Efficiency: 16%
\tRCE: –33 dB (EVM — 2.2% rms)

•Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak Power

•Capable of Handling 3 dB Overdrive @ 32 Vdc

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Integrated ESD Protection

•Greater Negative Gate-Source Voltage Range for Improved Class C Operation

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.