MRF6VP41KHS中文资料Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V数据手册恩XP规格书

描述 Description

The MRF6VP41KHR6 and MRF6VP41KHSR6 are designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

特性 Features

• Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 20 dBDrain Efficiency: 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
• These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
NOTE: PARTS ARE PUSH–PULL