MRF7S19210H中文资料1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF7S19210HR3 and MRF7S19210HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
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特性 Features

•Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain:20 dB
Drain Efficiency:29%
Device Output Signal PAR:  5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset: –33 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)

•Typical Pout @ 1 dB Compression Point ≃ 190 Watts CW

•100% PAR Tested for Guaranteed Output Power Capability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Integrated ESD Protection

•Greater Negative Gate-Source Voltage Range for Improved Class C Operation

•Designed for Digital Predistortion Error Correction Systems

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel