MRF7S19170HS中文资料Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 50 W Avg., 28 V数据手册恩XP规格书

描述 Description

The MRF7S19170HR3 and MRF7S19170HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

特性 Features

• Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 17.2 dBDrain Efficiency: 32%Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –37.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW Output Power
• Pout @ 1 dB Compression Point ≥ 170 Watts CW
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel