MRF7S21170HS中文资料Single W-CDMA Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 50 W Avg., 28 V数据手册恩XP规格书

描述 Description

The MRF7S21170HR3 and MRF7S21170HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

特性 Features

• Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 16 dBDrain Efficiency: 31%Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power
• Pout @ 1 dB Compression Point ≃ 170 W CW
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.