MRF7S21170HR3

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.TobeusedinClassABandClassCforPCN-PCS/cellularradioandWLLappl

MRF7S21170HSR3

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.TobeusedinClassABandClassCforPCN-PCS/cellularradioandWLLappl

MRF7S21170HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S21170HR3

RF Power Field Effect Transistors

MRF7S21170HR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF7S21170HR3

RF Power Field Effect Transistors

MRF7S21170HR3_07

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S21170HR3_08

RF Power Field Effect Transistors

MRF7S21170HR3_11

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF7S21170HR3_12

RF Power Field Effect Transistors

MRF7S21170HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S21170HSR3

RF Power Field Effect Transistors

MRF7S21170HSR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF7S21170HSR3

RF Power Field Effect Transistors

MRF7S21170HR3

包装：托盘 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-880

MRF7S21170HR5

包装：卷带（TR） 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-880

MRF7S21170HSR3

包装：卷带（TR） 封装/外壳：NI-880S 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 2.17GHZ NI-88OS