N-Channel Enhancement-Mode Lateral MOSFET

文件：1.24444 Mbytes 页数：20 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：1.24444 Mbytes 页数：20 Pages

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：608.26 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：608.26 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

文件：1.24444 Mbytes 页数：20 Pages

恩XP

965-1215 MHz，1000 W，50 V宽带射频功率LDMOS

RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power\n• Characterized with Seri;

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Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V

RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power\n• Characterized with Seri;

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