RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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FREESCALEFreescale Semiconductor, Inc

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N-Channel Enhancement-Mode Lateral MOSFET

文件：1.24444 Mbytes 页数：20 Pages

恩XP

Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V

RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20 dBDrain Efficiency: 56%\n• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power\n• Characterized with Seri;

恩XP

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FREESCALEFreescale Semiconductor, Inc

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