N-Channel Enhancement-Mode Lateral MOSFET

文件：723.19 Kbytes 页数：20 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：723.19 Kbytes 页数：20 Pages

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RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

470-860 MHz，90 W，50 V LDMOS宽带射频功率晶体管

MRF6V3090NR1 is Active.MRF6V3090NBR1 is Not Recommended for New Design.\nThe MRF6V3090N and MRF6V3090NB are designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Input Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Excell;

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Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V

MRF6V3090NR1 is Active.MRF6V3090NBR1 is Not Recommended for New Design.\nThe MRF6V3090N and MRF6V3090NB are designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Input Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Excell;

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