RF Power Field Effect Transis

文件：964.68 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transis

文件：964.68 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：969.53 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：426.37 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.20265 Mbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse a • Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• These product;

恩XP

960-1215 MHz，500 W，50 V脉冲射频功率LDMOS

These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse a • Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• These product;

恩XP

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse a • Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• These product;

恩XP