MRF5S19060N中文资料1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

The MRF5S19060NR1 and MRF5S19060NBR1 are designed for broadband commercial and industrial applications with frequenciesfrom 1930 to 1990 MHz. The high gain
and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 Volt base station equipment.

特性 Features

Typical 2–carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS–95
\t(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
\tPAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 14 dB
\tDrain Efficiency: 23%
\tIM3 @ 2.5 MHz Offset: –37 dBc in 1.2288 MHz Channel Bandwidth
\tACPR @ 885 kHz Offset: –51 dBc in 30 kHz Channel Bandwidth

Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW Output Power

Characterized with Series Equivalent Large–Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

200°C Capable Plastic Package

N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.