470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

Overview MRF373AR1 removed from active portfolio. Possible Replacement Part: MRF373ALR1.The MRF373AR1 is designed for broadband commercialand industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common s; \n\n•Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture\nOutput Power — 75 Watts\nPower Gain — 18.2 dB\nEfficiency — 60%\n\n•100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts (CW)\n\n•Integrated ESD Protection\n\n•Excellent Therm;

恩XP

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

文件：1.48757 Mbytes 页数：12 Pages

摩托罗拉

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common so

文件：217.54 Kbytes 页数：12 Pages

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

文件：1.48757 Mbytes 页数：12 Pages

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes 页数：8 Pages

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes 页数：8 Pages

摩托罗拉