MRF286S数据手册恩XP中文资料规格书

描述 Description

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETsN–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications.
 
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
  Output Power — 60 Watts (PEP)
   Power Gain — 9.5 dB
   Intermodulation Distortion — –28 dBc
• Typical Two–Tone Performance at 2000 MHz, 26 Volts
   Output Power — 60 Watts (PEP)
   Power Gain — 10.5 dB
   Efficiency — 32%
   Intermodulation Distortion — –30 dBc
• S–Parameter Characterization at High Bias Levels
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 60 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters