MRF176GU中文资料The RF MOSFET Line 200/150W, 500MHz, 50V数据手册MACOM规格书

描述 Description

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

特性 Features

·N-Channel Enhancement Mode Device
·Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)
·MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.
·MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)
·Low Crss — 7.0 pF Typ @ VDS = 50 V
·Low Thermal Resistance
·100% Ruggedness Tested at Rated Output Power

应用 Application

·Aerospace and Defense