Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

文件：1.37879 Mbytes 页数：4 Pages

bel

Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V

Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features • Guaranteed performance @1.215GHz, 28Vdc • Output power: 5.0W CW • Minimum gain = 8.5dB,

文件：198.78 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

文件：100.17 Kbytes 页数：4 Pages

Motorola

摩托罗拉

The RF Line Microwave Power Transistor

. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF P

文件：160.25 Kbytes 页数：4 Pages

MACOM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System

文件：16.37 Kbytes 页数：1 Pages

ASI

Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested

文件：170.22 Kbytes 页数：4 Pages

MA-COM

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Pha

文件：104.81 Kbytes 页数：4 Pages

MACOM

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美