丝印：MRF；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

bel

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

文件：100.17 Kbytes 页数：4 Pages

Motorola

摩托罗拉

The RF Line Microwave Power Transistor

. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF P

文件：160.25 Kbytes 页数：4 Pages

MACOM

Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V

Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features • Guaranteed performance @1.215GHz, 28Vdc • Output power: 5.0W CW • Minimum gain = 8.5dB,

文件：198.78 Kbytes 页数：5 Pages

MA-COM

Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested

文件：170.22 Kbytes 页数：4 Pages

MA-COM