BFG10丝印代码丝印对应型号-114ic电子网

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-MS	文件：74.77 Kbytes Page：10 Pages	型号：BFG10；Package：SOT-143；NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co	PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦	PHI
-MS	文件：257.56 Kbytes Page：11 Pages	型号：BFG10；Package：SOT-143；NPN 2 GHz RF power transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co	恩XP	恩XP
-MS	文件：9.37507 Mbytes Page：130 Pages	型号：BFG10；Package：SOT-143；RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	恩XP	恩XP
-MS	文件：65.2 Kbytes Page：10 Pages	型号：BFG10；Package：SOT-143；NPN 2 GHz RF power transistor	恩XP	恩XP

更多-MS供应商更新时间2025-8-3 16:30:00