NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05.

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FAIRCHILD

仙童半导体

DARLINGTON TRANSISTOR

DESCRIPTION The UTC MPSA13is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES= 30V

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UTC

友顺

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)

GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.

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KEC

KEC(Korea Electronics)

NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

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CDIL

SILICON NPN DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

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CENTRAL

NPN Silicon Darlington Transistor

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified

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MCC

Darlington Transistors

Darlington Transistors NPN Silicon

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MOTOROLA

摩托罗拉

Plastic-Encapsulate Transistros NPN Darlington Transistor

Plastic-Encapsulate Transistros NPN Darlington Transistor P/b Lead(Pb)-Free

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WEITRON

TO-92 Plastic-Encapsulate Transistors

文件：590.38 Kbytes 页数：1 Pages

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for applications requiring extremely high current gain.

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DCCOM

道全