NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Central

Amplifier Transistors

Amplifier Transistors Voltage and Current are Negative for PNP Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Plastic Encapsulated Transistor

FEATURES ● General Purpose Amplifier

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SECOS

喜可士

NPN Silicon Epitaxial Planar Transistor

PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications

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SEMTECH_ELEC

先之科半导体

NPN SMALL SIGNAL TRANSISTOR

Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages

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TRSYS

Transys Electronics

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: MPSA05: 60 V MPSA06: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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WINNERJOIN

永而佳

NPN General Purpose Amplifier

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MCC

Amplifier Transistors

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ONSEMI

安森美半导体

NPN MPSA05 PNP MPSA55

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UTC

友顺

COMPLEMENTARY SILICON TRANSISTORS

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