30V, 0.3A High Frequency Transformer Driver for Automotive, AEC-Q100

DESCRIPTION The MPQ18913 is a high frequency half bridge transformer driver, which is the ideal solution for the primary side switcher used in isolated power supplies. It supports a wide input voltage range of 5V-30V, and integrates two switching FETs which take up to 300 mA average input cu

文件：1.45809 Mbytes 页数：17 Pages

MPS

美国芯源

100V, High-Frequency, Half-Bridge GaN/MOSFET Driver, AEC-Q100 Qualified

DESCRIPTION The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application. The MPQ1918 features independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs

文件：634.64 Kbytes 页数：18 Pages

MPS

美国芯源

100V, 8A, High-Frequency,Half-Bridge Gate Driver,AEC-Q100 Qualified

DESCRIPTION The MPQ1923-AEC1 is a high-frequency, Nchannel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and highside MOSFET (HS-FET) driver channels are controlled independently, and are matched with

文件：851.08 Kbytes 页数：21 Pages

MPSIND

美国芯源

丝印：MP1923；Package：QFN-8；100V, 8A, High-Frequency,Half-Bridge Gate Driver,AEC-Q100 Qualified

DESCRIPTION The MPQ1923-AEC1 is a high-frequency, Nchannel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and highside MOSFET (HS-FET) driver channels are controlled independently, and are matched with

文件：851.08 Kbytes 页数：21 Pages

MPSIND

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丝印：MP1923；Package：QFN-10；100V, 8A, High-Frequency,Half-Bridge Gate Driver,AEC-Q100 Qualified

DESCRIPTION The MPQ1923-AEC1 is a high-frequency, Nchannel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and highside MOSFET (HS-FET) driver channels are controlled independently, and are matched with

文件：851.08 Kbytes 页数：21 Pages

MPSIND

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100V, 4A, High-Frequency, Half-Bridge Gate Driver

DESCRIPTION The MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay. In the case of an insufficient supply,

文件：702.92 Kbytes 页数：16 Pages

MPS

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2A, 1.3V–6.0V DDR Memory Termination Regulator AEC-Q100 Qualified

DESCRIPTION The MPQ20073 integrates the DDR memory termination regulator with the output voltage (VTT) and a buffered VTTREF outputs is a half of VREF. The VTT-LDO is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/low-external component count syst

文件：415.1 Kbytes 页数：12 Pages

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丝印：20073；Package：MSOP8E；2A, 1.3V–6.0V DDR Memory Termination Regulator AEC-Q100 Qualified

DESCRIPTION The MPQ20073 integrates the DDR memory termination regulator with the output voltage (VTT) and a buffered VTTREF outputs is a half of VREF. The VTT-LDO is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/low-external component count syst

文件：415.1 Kbytes 页数：12 Pages

MPSIND

美国芯源

丝印：20073；Package：MSOP8E；2A, 1.3V–6.0V DDR Memory Termination Regulator AEC-Q100 Qualified

DESCRIPTION The MPQ20073 integrates the DDR memory termination regulator with the output voltage (VTT) and a buffered VTTREF outputs is a half of VREF. The VTT-LDO is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/low-external component count syst

文件：415.1 Kbytes 页数：12 Pages

MPSIND

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Low Cost, 1-4 Output 200W EN60601 (Medical) Approved AC/DC Power Supplies

Key Features: • Universal AC Input - Full Range • Power Good/ Power Fail Output Signals • EN60601, UL2601 (Medical) Approved • Fixed Switching Frequency (100 kHz) • 200W Ouput Power • 1 to 4 Outputs • Low Leakage Current,

文件：1.42956 Mbytes 页数：4 Pages

MPD