MPQ1925中文资料美国芯源数据手册PDF规格书

DESCRIPTION

The MPQ1925 is a high-frequency, N-channel

MOSFET, half-bridge gate driver. The device’s

low-side MOSFET (LS-FET) and high-side

MOSFET (HS-FET) driver channels are

independently controlled, and are matched with

less than 5ns in time delay. In the case of an

insufficient supply, the device’s HS-FET and

LS-FET under-voltage lockout (UVLO)

protection forces the outputs low. The

MPQ1925 also features an integrated bootstrap

(BST) diode to reduce the external component

count.

The MPQ1925 is available in a QFN-8

(4mmx4mm) package.

FEATURES

• Drives an N-Channel MOSFET Half-Bridge

• 115V Bootstrap Voltage (VBST) Range

• On-Chip Bootstrap (BST) Diode

• Typical 20ns Propagation Delay

• <5ns Gate Driver Matching Time

• Drives a 2.2nF Load with a 15ns Rise Time

and 10ns Fall Time at 12V VDD

• Transistor-to-Transistor Logic (TTL)-

Compatible Input

• <150µA Quiescent Current (IQ)

• High-Side MOSFET (HS-FET) and LowSide MOSFET (LS-FET) Under-Voltage

Lockout (UVLO) Protection

• Available in a QFN-8 (4mmx4mm) Package

APPLICATIONS

• Motor Drivers

• Telecommunication Half-Bridge Power

Supplies

• Avionics DC/DC Converters

• Two-Switch Forward Converters

• Active-Clamp Forward Converters