MPQ1923-AEC1中文资料美国芯源数据手册PDF规格书

DESCRIPTION

The MPQ1923-AEC1 is a high-frequency, Nchannel

MOSFET, half-bridge gate driver. The

device’s low-side MOSFET (LS-FET) and highside

MOSFET (HS-FET) driver channels are

controlled independently, and are matched with

<5ns in time delay.

In the case of an insufficient supply, the device’s

HS-FET and LS-FET under-voltage lockout

(UVLO) protection forces the outputs low. The

MPQ1923-AEC1 also features an integrated

bootstrap (BST) diode to reduce the external

component count.

The MPQ1923-AEC1 is available in QFN-10

(4mmx4mm) and QFN-8 (4mmx4mm)

packages.

FEATURES

• Drives an N-Channel MOSFET Half-Bridge

• Low Dropout with 4.5V Under-Voltage

Lockout (UVLO) Falling Threshold

• 120V Bootstrap Voltage (VBST) Range

• On-Chip Bootstrap Diode

• 20ns Typical Propagation Delay

• 8A Sink Current, 7A Source Current at 12V

VDD

• <5ns Gate Driver Matching Time Delay

• Drives a 1nF Load with 7.2ns Rise Time

(tRISE) and 5.5ns Fall Time (tFALL) at 12V VDD

• TTL-Compatible Input

• <300μA Quiescent Current (IQ)

• UVLO Protection for the HS-FET and

LS-FET Gate Drivers

• Available in QFN-10 (4mmx4mm) and

QFN-8 (4mmx4mm) Packages

• Available in AEC-Q100 Grade 1

APPLICATIONS

• Motor Drivers

• Telecom Half-Bridge Power Supplies

• Avionics DC/DC Converters

• Two-Switch Forward Converters

• Active-Clamp Forward Converters