带电熔丝的 2.65V 至 16V、6A、断电保护管理 IC

MPL • 输入限流 (ILIMIT_E-FUSE) 开关：• 2.65V 至 16V 宽输入电压 (VIN) 范围\n• 电熔丝具有20mΩ 导通电阻 (RDS(ON)) MOSFET\n• 2A 至 6A 可配置 ILIMIT_E-FUSE\n• 3V、5V 或 12V 可选过压保护 (OVP)\n• 输入端反向电流阻断以防止漏电\n• 可配置软启动时间 (tSS)\n• 可配置启动延迟时间 (tTPOR)\n\n• 36V 充电和备份变换器：• 高达 36V 的可配置存储电压 (VSTRG)\n• 60mΩ/37mΩ RDS(ON) MOSFET\n• 可配置升压充电电流\n• 通过系统电压调节;

MPS

美国芯源

Wide 2.6V to 16V Input Voltage, 6A, High-Efficiency Power-Loss Protection IC with Integrated E-Fuse

The MP5516N is a monolithic power management system designed to manage energy storage and backup release in enterprise solid-state drives (SSDs). It consists of a current-limited, reverse-current protected input power switch (E-fuse), an autonomous buck-boost energy storage and release converter, an • Input Current Limit Switch:• Wide 2.6V to 16V Input Voltage (VIN)\n• 20mΩ On Resistance (RDS(ON)) Switch for E-Fuse\n• 1.2A to 6A Configurable Input Current (IIN) Limit\n• 3.3V, 5V, and 12V Selectable Under-Voltage Lockout (UVLO) and Over-Voltage Protection (OVP)\n• Reverse Blocking at the Input S;

MPS

美国芯源

Compact modular design with DIN rail mounting

文件：440.88 Kbytes 页数：29 Pages

EATON

伊顿

PHOTO DIODE

f 80 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC

文件：185.14 Kbytes 页数：10 Pages

RENESAS

瑞萨

PHOTO DIODE

f 80 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC

文件：185.14 Kbytes 页数：10 Pages

RENESAS

瑞萨