2SC2873

Marking：MO；Package：SOT-89；Power Amplifier Applications Power Switching Applications

BF998

Marking：MO；Package：SOT-143；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF998

Marking：MO；Package：SOT-143；Silicon N_Channel MOSFET Tetrode

AAT3242ITP-SG-T1

Marking：MOXYY；Package：TSOPJW-12；300mA/150mA Dual CMOS LDO Linear Regulator

Features •High/LowCurrentOutputs,300mA/150mA •LowDropout: ▪LDOA:400mVat300mA ▪LDOB:200mVat150mA •HighOutputVoltageAccuracy:±1.5% •HighPSRR:65dBat1kHz •70μAQuiescentCurrentforEachLDO •Over-Current/Short-CircuitProtection •Over-TemperatureProtection

BF998R

Marking：MOR；Package：SOT-143R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

BF998R

Marking：MOR；Package：SOT-143R；Silicon N-Channel MOSFET Tetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

KTS1675EUT-TR

Marking：MOXXYYZZZZ；Package：WLCSP-20；Overvoltage Protector with Bidirectional Blocking and Surge Protection

Features •WideInputvoltagerange:3.0Vto+28V •IntegratedMOSFETswitch20mΩtypical •5AContinuousCurrent •VPSelectpin Over-Voltagethresholdtrip13V/17V VSNSclamp16V/20Vmax •FastOver-Voltageresponsetime100ns •LowQuiescentCurrent:160μA(typ.) •IntegratedPro

UCLAMP1201P

Marking：MOC；Package：SLP1006P2；Ultra-small package (1.0 x 0.6 x 0.5mm)

Description TheUClampseriesofTVSarraysaredesignedtoprotect sensitiveelectronicsfromdamageorlatch-updue toESD.Itisdesignedtoreplacemultilayervaristors MLVs)inportableapplicationssuchascellphones, note-bookcomputers,andPDAs.Itfeatureslarge cross-sec-tionala

BF998R

Marking：MOR；Package：SOT-143R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF998R

Marking：MOR；Package：SOT-143R；Silicon N_Channel MOSFET Tetrode