丝印：MO；Package：SOT-89；TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213

文件：187.48 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：MO；Package：SOT-89；Silicon NPN Epitaxial Transistor

FEATURES Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time Complementary to 2SA1213 APPLICATIONS Power amplifier Power Switching

文件：511.16 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：MO；Package：SOT-89-3L；Plastic-Encapsulate Transistors

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213A APPLICATIONS ● Power Amplifier and Switching

文件：3.0464 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：MO；Package：SOT-89；NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

文件：562.58 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：MO；Package：SOT-143；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

丝印：MO；Package：SOT-143；Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

文件：249.05 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：MO；Package：X2-DSN0603-2；LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Contact ±10kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring spe

文件：344.58 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：MO；Package：SOT-323；Common Anode Silicon Dual Switching Diode

Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. • Fast trr,

文件：337.81 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：MO；Package：SON；TXU0101 Single-Bit Fixed Direction Voltage-Level Translator with Schmitt-Trigger Inputs and 3-State Outputs

1 Features • Fully configurable dual-rail design allows each port to operate from 1.1 V to 5.5 V • Up to 200 Mbps support for 3.3 V to 5.0 V • Schmitt-trigger inputs allows for slow and noisy inputs • Inputs with integrated static pull-down resistors prevent channels from floating • High d

文件：2.26596 Mbytes 页数：40 Pages

TI

德州仪器

丝印：MO；Package：SON；TXU0101 Single-Bit Fixed Direction Voltage-Level Translator with Schmitt-Trigger Inputs and 3-State Outputs

1 Features • Fully configurable dual-rail design allows each port to operate from 1.1 V to 5.5 V • Up to 200 Mbps support for 3.3 V to 5.0 V • Schmitt-trigger inputs allows for slow and noisy inputs • Inputs with integrated static pull-down resistors prevent channels from floating • High d

文件：2.0472 Mbytes 页数：35 Pages

TI

德州仪器