MELF METAL FILM RESISTORS

APPLICATIONS All general purpose applications Power applications Energy meter FEATURES AEC-Q200 qualified MELF, SMD package Excellent pulse withstanding capability Ultra miniature size Higher power rating RoHS compliant and halogen free

文件：1.22969 Mbytes 页数：9 Pages

YAGEO

国巨

Metallized Oval, Axial Leads

文件：92.33 Kbytes 页数：3 Pages

CDE

5mm BOX POLYESTER

文件：288.62 Kbytes 页数：2 Pages

DUBILIER

MELF METAL FILM RESISTORS

APPLICATIONS All general purpose applications Power applications Energy meter FEATURES AEC-Q200 qualified MELF, SMD package Excellent pulse withstanding capability Ultra miniature size Higher power rating RoHS compliant and halogen free

文件：1.22969 Mbytes 页数：9 Pages

YAGEO

国巨

Power Amplifier

Key featurs 입력 8채널/출력 8채널의 Multi-Channel Audio AMP입니다. 동작 기능 PC와 Net work 연결되며, AMP의 상태를 PC로 모니터링 할 수 있습니다. NMS 기능 Acti ve Port를 Matrix C와 연결하여 S tand-by Mode 진/출입을 Matrix C로 제어할 수 있습니다. Acti ve 기능 (S tand-by) LAN Cab le을 통해 Matrix C와 Audio Signal을 Link 할 수 있습니다. LINK IN/OUT 기능

文件：2.65724 Mbytes 页数：2 Pages

SOVICO

MELF METAL FILM RESISTORS

APPLICATIONS All general purpose applications Power applications Energy meter FEATURES AEC-Q200 qualified MELF, SMD package Excellent pulse withstanding capability Ultra miniature size Higher power rating RoHS compliant and halogen free

文件：1.22969 Mbytes 页数：9 Pages

YAGEO

国巨

250V 0.21Ω N-channel MOSFET

 Description MMP25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI an

文件：731.81 Kbytes 页数：10 Pages

MGCHIP

丝印：25R210RZ；Package：TO-220；250V 0.21Ω N-channel MOSFET

 Description MMP25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI an

文件：731.81 Kbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.195Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：333.45 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.71 Kbytes 页数：2 Pages

ISC

无锡固电