Silicon Step Recovery Diodes

The Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices. The fast transition times make these devices useful for fast sampling gate drivers, frequency multiplier ·Low Inductance\n·Transition times down to 30 picoseconds in 50 system\n·Rugged Beam Lead constructio\n·Oxide and polymide passivation;

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Silicon Step Recovery Diodes

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

MACOM

Silicon Step Recovery Diodes

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming. ·Output combs to 40+ GHz\n·Screening per MIL-PRF-19500and MIL-PRF-38534 available\n·Transition times down to 35 ps;

MACOM

Package：0402（1005 公制）；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：DIODE,SRD-BEAMLEAD-PACKAGE, 0402

MACOM Technology Solutions

Package：E28；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：DIODE, BEAMLEAD SRD, E28X

MACOM Technology Solutions

Package：0402（1005 公制）；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：DIODE,SRD-BEAMLEAD-PACKAGE, 0402

MACOM Technology Solutions