Silicon Step Recovery Diodes

The Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices. The fast transition times make these devices useful for fast sampling gate drivers, frequency multiplier ·Low Inductance\n·Transition times down to 30 picoseconds in 50 system\n·Rugged Beam Lead constructio\n·Oxide and polymide passivation;

MACOM

SOT-363

DIODE

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SOT-363

Slkor(萨科微

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SOT-363

CJ

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TO-263

MAGNACHIP

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