MMBTSC2712

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor foraudiofrequencygeneralpurposeamplifierapplications. ThetransistorissubdividedintofourgroupsO,Y,GandL, accordingtoitsDCcurrentgain. Features •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •HighhFE:hFE=70~700 •Lown

MMBTSC2712

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor foraudiofrequencygeneralpurposeamplifierapplications. ThetransistorissubdividedintofourgroupsO,Y,GandL, accordingtoitsDCcurrentgain. Features •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •HighhFE:hFE=70~700 •Lown

MMBTSC2712

NPN Transistor

MMBTSC2712G

Marking：LG；Package：TO-236；NPN Transistor

MMBTSC2712L

Marking：LL；Package：TO-236；NPN Transistor

MMBTSC2712O

Marking：LO；Package：TO-236；NPN Transistor

MMBTSC2712Y

Marking：LY；Package：TO-236；NPN Transistor