MMBTH10L中文资料NPN Bipolar Transistor数据手册ONSEMI规格书

描述 Description

This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package. This device is ideal for low-power surface mount applications.

特性 Features

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT-23 Surface Mount Package Saves Board Space
• Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

简介

MMBTH10L属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的MMBTH10L晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。