NPN Transistor

三极管,NPN,VCBO 40V,VCEO 30V,VEBO 5A,IC 0.5A, PD 200mW,HFE 160~400,FT Typ.100MHZ,Package SOT-23

TANiSemi

台奕

丝印：J3；Package：TO-236；NPN Transistor

文件：589.85 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体