NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

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Fairchild

仙童半导体

NPN RF Transistor

Description This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 A to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Features • This Devices is Pb−

文件：122.64 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN RF Transistor

文件：490.36 Kbytes 页数：12 Pages

Fairchild

仙童半导体

NPN RF晶体管

NPN RF晶体管 该器件可以在共发射极或共基极模式的操作中用于集电极电流为100 mA至30 mA的低噪声UHF/VHF放大器，此外还可用于低频漂移和高输出UHF振荡器。 采用工艺40设计。

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 2GHZ SOT23-3

ONSEMI

安森美半导体