MMBT3906-C

Marking：2A；Package：SOT-23；PNP Plastic Encapsulated Transistor

MMBT3906-CAR

Marking：2A；Package：SOT-23；TRANSISTOR(PNP)

FEATURES ●WedeclarethatthematerialofproductcompliancewithRoHS requirementsandHalogenFree. ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable.

MMBT3906DW

DUALTRANSISTOR

MMBT3906DW

PNPSiliconEpitaxialPlanarTransistor

MMBT3906DW

S0OT-363Plastic-EncapsulateTransistors

FEATURES *Epitaxialplanardieconstruction *®ldealforlowpoweramplificationandswitching

MMBT3906E

TRANSISTOR

DESCRIPTION PNPEpitaxialplanarSiliconTransistor FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904E) Ultra-SmallSurfaceMountPackage AlsoAvailableinLeadFreeVersion APPLICATION GeneralPurposeAmplifier,switching Forportablee

MMBT3906EF

Smallsignalapplication

Descriptions •Smallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage •Lowcollectoroutputcapacitance •ComplementarypairwithMMBT3904EF

MMBT3906FA

40VPNPSMALLSIGNALTRANSISTORINDFN0806

Features •BVCEO>-40V •IC=-200mAhighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2packagefootprint,16timessmallerthanSOT23 •0.4mmheightpackageminimizingoff-boardprofile •ComplementaryNPNTypeMMBT3904FA •TotallyLead-Free&FullyRoHScompliant(Notes

MMBT3906FW

GeneralPurposeTransistor

MMBT3906FZ

40VPNPSMALLSIGNALTRANSISTORINDFN0606

Features •BVCEO>-40V •IC=-200mAHighCollectorCurrent •PD=925mWPowerDissipation •0.36mm2PackageFootprint,40SmallerthanDFN1006 •0.4mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeMMBT3904FZ •TotallyLead-Free&FullyRoHSCompliant(Notes1&a