SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：53.32 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications —Designed primarily for UHF mixer applications. — — —

文件：237.46 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Dual Hot Carrier Mixer Diodes

文件：229.52 Kbytes 页数：3 Pages

DSK

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：133.89 Kbytes 页数：3 Pages

PANJIT

強茂

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：84.98 Kbytes 页数：3 Pages

PANJIT

強茂

- A,7V,Surface Mount Small Signal Schottky Diodes

Galaxy

银河微电

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA

文件：45.93 Kbytes 页数：2 Pages

LRC

乐山无线电

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA

文件：60.78 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

文件：41.41 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

文件：127.59 Kbytes 页数：3 Pages

ONSEMI

安森美半导体