SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

文件：89.41 Kbytes 页数：3 Pages

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：52.4 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Diodes

Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications —For UHF mixer applications. — —

文件：254.28 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Schottky Barrier Diode

文件：208.21 Kbytes 页数：3 Pages

DSK

Schottky Barrier Diode

文件：146.8 Kbytes 页数：3 Pages

BILIN

银河微电

Schottky Barrier Diode

文件：157.75 Kbytes 页数：3 Pages

BILIN

银河微电

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

文件：48.01 Kbytes 页数：2 Pages

LRC

乐山无线电

Dual Shottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail

文件：70.95 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：52.4 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable •

文件：127.59 Kbytes 页数：3 Pages

ONSEMI

安森美半导体