Dual Shottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail

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ONSEMI

安森美半导体

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

文件：48.01 Kbytes 页数：2 Pages

LRC

乐山无线电

Dual Schottky Barrier Diode

文件：43.18 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts\n• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

LRC

乐山无线电

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable •

文件：127.59 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Dual Schottky Barrier Diode

文件：43.18 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Schottky Barrier Diode

文件：43.18 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 7V 200MW SC70

ONSEMI

安森美半导体