MMBD352WT1

Dual Shottky Barrier Diode

ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra−fastswitchingcircuits. Features •VeryLowCapacitance−LessThan1.0pF@ZeroVolts •LowForwardVoltage−0.5Volts(Typ)@IF=10mA •Pb−FreePackageisAvail

MMBD352WT1

Dual Schottky Barrier Diode

ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra–fastswitchingcircuits. •VeryLowCapacitance—LessThan1.0pF@ZeroVolts •LowForwardVoltage—0.5Volts(Typ)@IF=10mA

MMBD352WT1

Dual Schottky Barrier Diode;

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts\n• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

MMBD352WT1

Dual Schottky Barrier Diode

MMBD352WT1G

Dual Schottky Barrier Diode

ThesedevicesaredesignedprimarilyforUHFmixerapplicationsbutaresuitablealsoforuseindetectorandultra−fastswitchingcircuits. Features •VeryLowCapacitance−LessThan1.0pF@0V •LowForwardVoltage−0.5V(Typ)@IF=10mA •AECQualifiedandPPAPCapable •

MMBD352WT1_05

Dual Schottky Barrier Diode

MMBD352WT1G

Dual Schottky Barrier Diode

MMBD352WT1G

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 7V 200MW SC70