丝印：MM；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：400.42 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：MM；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：410.75 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：MM；Package：SSOP5；Delay Time Controlled by external Capacitor, Two output types

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：400.42 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：MM；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：400.42 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：MM；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/

文件：2.31369 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：MM；Package：SOD123W；4.1 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 4.1 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximatel

文件：212.58 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MM；Package：CFP3；5.5 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤5.5 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximately

文件：213.43 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MM；Package：SC-88；Configurable Multifunction Gate

The NL7SZ58 is an advanced high−speed CMOS multifunction gate. The device allows the user to choose logic functions AND, OR, NAND, NOR, XOR, INVERT and BUFFER. Features • Designed for 1.65 V to 5.5 V VCC Operation • 3.3 ns tPD at VCC = 5 V (Typ) • Inputs/Outputs Overvoltage Tolerant up to

文件：322.28 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：MM；Package：SC-88；Configurable Multifunction Gate

The NL7SZ58 is an advanced high−speed CMOS multifunction gate. The device allows the user to choose logic functions AND, OR, NAND, NOR, XOR, INVERT and BUFFER. Features • Designed for 1.65 V to 5.5 V VCC Operation • 3.3 ns tPD at VCC = 5 V (Typ) • Inputs/Outputs Overvoltage Tolerant up to

文件：322.28 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：MM；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.00428 Mbytes 页数：4 Pages

SUNMATE

森美特