Silicon Power Transistors

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MJW21193 (PNP) MJW21194 (NPN) The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. •Total Harmonic Distor

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ONSEMI

安森美半导体

Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These

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isc Silicon NPN Power Transistor

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ISC

无锡固电

Silicon NPN transistor in a TO-3P Plastic Package.

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FOSHAN

蓝箭电子

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

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Silicon Power Transistors

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Silicon Power Transistors

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Bipolar Transistor, NPN, 250 V, 16 A

The MJW21194 Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized\n• High DC Current Gain - hFE = 20 Min @ IC = 8 Adc\n• Excellent Gain Linearity\n• High SOA: 2.25 A, 80 V, 1 Second;

ONSEMI

安森美半导体

音频功放晶体管

THUNDER

中科创达

音频三极管

BlueRocket

蓝箭电子