MJF13009

isc Silicon NPN Power Transistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar

MJF13009

Silicon NPN Power Transistor

DESCRIPTION •Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage:VCE(sat)=1.5(Max)@IC=8.0A •SwitchingTime:tf=0.7μs(Max.)@IC=8.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitchingininductivecircuit,theyar

P13009

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ComputerSwitchPowerSupply

P13009A

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ComputerSwitchPowerSupply

PHE13009

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION ThePHE13009isasiliconnpnpowerswitchingtransistorintheTO220ABenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

PHE13009

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION ThePHE13009isasiliconnpnpowerswitchingtransistorintheTO220ABenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

SAEP13009

ADSLLINETRANSFORMER

SBF13009-O

HighVoltageFast-SwitchingNPNPowerTransistor

SBP13009

HighVoltageFast-SwitchingNPNPowerTransistor

SBP13009A

HighVoltageFast-SwitchingNPNPowerTransistor

GeneralDescription Thisdeviceisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@8.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical320mV@8.0A/1.6A)