isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

文件：104.83 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

文件：85.98 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220

NJS

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

文件：121 Kbytes 页数：3 Pages

JINGDAO

晶导

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

文件：119.26 Kbytes 页数：3 Pages

JINGDAO

晶导

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：59.8 Kbytes 页数：7 Pages

PHI

飞利浦