| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
ExtraLargeAlligatorClipWith4mmSheathSafetyJack | POMONA Pomona Electronics | POMONA | ||
Component112X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
OPERATIONINSTRUCTION | COREBAICoreBai Microelectronics 芯佰芯佰微电子(北京)有限公司 | COREBAI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedSGTtechnology Description： ThisN-ChannelMOSFETusesadvancedSGTtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=60V,ID=130A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
13-16GHzHighPowerAmplifier Description TheCHA6042isafour-stagepHEMTHPAMMICdesignedforVSATgroundterminalsandotherradioapplications.TheCHA6042provides32dBmnominaloutputpowerat1dBgaincompressionoverthe13-16GHzfrequencyrange,and32dBsmall-signalgain.Thisproductwillbeavailableinchipf | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175°CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI Features Ratedto+175°C–IdealforHighAmbientTemperature Environments 100UnclampedInductiveSwitching–EnsuresMoreReliable andRobustEndApplication LowRDS(ON)–MinimizesPowerLosses LowQg–MinimizesSwitchingLosses Lead-FreeFinish;RoHSCompliant(Notes1&2) Halogenan | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNEL175CMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNELMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Thick-FilmHybridICUnipolarFixed-CurrentChopper(Self-ExcitedPWM)SchemeandBuilt-inPhaseSignalDistributionICTwo-PhaseSteppingMotorDriver(SquareWaveDrive)OutputCurrent2.4A Overview TheSTK672-120-Eisaunipolarfixed-currentchoppertype2-phasesteppingmotordriverhybridIC.ItfeaturespowerMOSFETsintheoutputstageandabuilt-inphasesignaldistributionIC.TheincorporationofaphasedistributionICallowstheSTK672-120-Etocontrolthespeedofthe | SANYOSanyo 三洋三洋电机株式会社 | SANYO |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl
- 性质：
功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD650,BD702,FC75B,
- 最大耗散功率：
75W
- 放大倍数：
- 图片代号：
B-21
- vtest：
100
- htest：
999900
- atest：
8
- wtest：
75
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
N/A |
6500 |
询价 | ||||
22+23+ |
TO-247 |
51774 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | |||
111 |
TO-247 |
513 |
原装正品 |
询价 | |||
SMD |
2021+ |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
标准封装 |
57598 |
一级代理原装正品现货期货均可订购 |
询价 | ||||
N/A |
2022+ |
TO-247 |
4047 |
授权分销商,公司现货库存! |
询价 | ||
22+ |
TO-247 |
8900 |
英瑞芯只做原装正品!!! |
询价 | |||
21+ |
TO-247 |
6270 |
只做原装正品假一赔十!正规渠道订货! |
询价 | |||
2022+ |
TO-247 |
300 |
询价 | ||||
MOT |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
