POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V • DC Current Gain— : hFE = 750(Min) @ IC=-2A • Complement to Type MJE803T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

文件：250.78 Kbytes 页数：2 Pages

ISC

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Central

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