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MTD2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV™PowerFieldEffectTransistorDPAKForSurfaceMountP–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTD2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTD2955V

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD2955V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD2955VG

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD2955VG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP2955

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP2955D

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    MJE2955TTU_Q

  • 功能描述:

    两极晶体管 - BJT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
PCR
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
询价
华晰
23+
TO-220
50000
全新原装正品现货,支持订货
询价
华晰
2022+
TO-220
57550
询价
华晰
24+
TO-220
60000
全新原装现货
询价
ST/意法
19+
TO-220AB
59650
只做原装正品
询价
ST/意法
24+
TO-220AB
59650
只做原装,欢迎询价,量大价优
询价
ST/意法
2022+
TO-220AB
8000
只做原装支持实单,有单必成。
询价
ST/意法
TO220
275000
一级代理原装正品,价格优势,长期供应!
询价
ST/意法
2023+
TO-220AB
50000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
CJ/长电
24+
TO-220-3L
50000
全新原装,一手货源,全场热卖!
询价
更多MJE2955TTU_Q供应商 更新时间2025-5-15 20:00:00