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型号	下载订购	功能描述	制造商上传企业	LOGO
MJE13003G-V-X-T92-A-B	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-T92-A-K	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-T92-F-B	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-T92-F-K	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-T9N-B	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-T9N-K	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-TA3-T	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-TM3-T	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-TMS-T	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-V-X-TN3-R	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC

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产品属性

产品编号：
MJE13003G
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
系列：
SWITCHMODE™
包装：
托盘
晶体管类型：
NPN
不同 Ib、Ic 时 Vce 饱和压降（最大值）：
3V @ 500mA，1.5A
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
8 @ 500mA，2V
频率 - 跃迁：
10MHz
工作温度：
-65°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-225AA，TO-126-3
供应商器件封装：
TO-126
描述：
TRANS NPN 400V 1.5A TO126

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MJE13003G	onsemi	25+	TO-126	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市一线半导体有限公司	MJE13003G	ON	24+	TO-225	8866		询价
深圳市福安瓯科技有限公司	MJE13003G	ON	25+	TO225	5000		询价
深圳市华来深电子有限公司	MJE13003G	ON	23+	TO-126	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市威雅利发展有限公司	MJE13003G	ON	07+	TO225	25	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	MJE13003G	ON	23+	TO225	25	正规渠道,只有原装!	询价
深圳市鹏顺微电子科技有限公司	MJE13003G	ON Semiconductor	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳深宇韬电子科技有限公司	MJE13003G	ON	2023+	TO225	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市安富世纪电子有限公司	MJE13003G	ON	23+	TO225	32	全新原装正品现货,支持订货	询价
深圳市宏捷佳电子科技有限公司	MJE13003G	ON	25+	TO-126	37650	独立分销商公司只做原装诚心经营免费试样正品保证	询价

更多MJE13003G供应商更新时间2026-2-1 22:59:00

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