MJE13003G-V-X-TMS-T中文资料下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
MJE13003G-V-X-TMS-T	文件：409.01 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：409.01 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003G-X-TMS-T	文件：413.32 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR 文件：413.32 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003-H	文件：378.75 Kbytes Page：8 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：378.75 Kbytes 页数：8 Pages	UTC 友顺	UTC
MJE13003HT	文件：556.15 Kbytes Page：6 Pages	MJE NPN SERIES TRANSISTORS 文件：556.15 Kbytes 页数：6 Pages	SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司	SISEMIC

更多MJE13003G-V-X-TMS-T供应商更新时间2025-10-7 15:02:00