MJE13003G-X-TMS-T规格书应用电路批发供应-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
MJE13003G-X-TMS-T	文件：413.32 Kbytes Page：9 Pages	NPN SILICON POWER TRANSISTOR 文件：413.32 Kbytes 页数：9 Pages	UTC 友顺	UTC
MJE13003-H	文件：378.75 Kbytes Page：8 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：378.75 Kbytes 页数：8 Pages	UTC 友顺	UTC
MJE13003HT	文件：556.15 Kbytes Page：6 Pages	MJE NPN SERIES TRANSISTORS 文件：556.15 Kbytes 页数：6 Pages	SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司	SISEMIC
MJE13003HV	文件：445.8 Kbytes Page：2 Pages	TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Typ.), tf=0.7μS(Typ.), at IC=1A • High Collector Voltage : VCBO=900V. 文件：445.8 Kbytes 页数：2 Pages	KEC KEC(Korea Electronics)	KEC

更多MJE13003G-X-TMS-T供应商更新时间2025-10-5 11:06:00