NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A

文件：92.13 Kbytes 页数：2 Pages

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NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 1.0Watts of Power Dissipation. • Collector-current 0.2A • Collector-base Voltage 600V • Operating and storage junction temperature range: -55OC to +150OC • Marking: 13001 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inf

文件：247.5 Kbytes 页数：3 Pages

MCC

TO-92 Plastic-Encapsulate Transistors (NPN)

FEATURE · power switching applications

文件：180.3 Kbytes 页数：1 Pages

TGS

TO-92 Plastic-Encapsulate Transistors

文件：180.3 Kbytes 页数：1 Pages

TGS

NPN Triple Diffused Planar Type High Voltage Transistor

文件：423.43 Kbytes 页数：4 Pages

ARTSCHIP

NPN SILICON POWER TRANSISTOR

文件：219.41 Kbytes 页数：3 Pages

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NPN MJE SERIES TRANSISTORS

文件：393.83 Kbytes 页数：5 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

Bipolar Transistor

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circu

文件：281.88 Kbytes 页数：8 Pages

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NPN SILICON POWER TRANSISTOR

FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A

文件：196.88 Kbytes 页数：3 Pages

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