MJD243中文资料4.0 A，100 V NPN 双极功率晶体管数据手册ONSEMI规格书

描述 Description

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

特性 Features

• Collector-Emitter Sustaining VoltageVCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain hFE = 40 (Min) @ IC= 200 mAdchFE= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)
• Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)
• Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdcVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These are PbFree Packages

简介

MJD243属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJD243晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。