| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD148 | NPN Silicon Power Transistor NPNSiliconPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •HighGain−50Min@IC=2.0A •LowSaturationVoltage−0.5V@IC=2.0A •HighCurrentGain−BandwidthProduct−fT=3.0MHzMin@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD148 | isc Silicon NPN Power Transistor DESCRIPTION •DCCurrentGain-:hFE=85(Min)@IC=0.5A •LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=2A •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforuseingeneral | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD148 | NPN SILICON PLASTIC POWER TRANSISTORS NPNSILICONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | CDIL | |
MJD148 | Marking：MJD148；Package：DPAK；45 V, 4 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Electricallysimilartopopul | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
MJD148 | Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=45V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.5V(Max)@IC=2A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD148 | NPN Silicon Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD148 | NPN Silicon Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Marking：MJD148A；Package：DPAK；45 V, 4 A NPN high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD148series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforuse | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45 V, 4 A NPN high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD148series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforuse | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPN Silicon Power Transistor NPNSiliconPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •HighGain−50Min@IC=2.0A •LowSaturationVoltage−0.5V@IC=2.0A •HighCurrentGain−BandwidthProduct−fT=3.0MHzMin@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
MJD148
- 制造商：
ONSEMI
- 制造商全称：
ON Semiconductor
- 功能描述：
NPN Silicon Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
FCS |
23+ |
TO-2523L(DPAK) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ON/安森美 |
2022+ |
DPAK-4 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ON/安森美 |
23+ |
TO-251 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
询价 | ||
ON/安森美 |
22+ |
TO-252-4 |
98688 |
询价 | |||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
询价 | ||
ON |
25+ |
TO-252-4 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NEXPERIA/安世 |
25+ |
SOT-428 |
880000 |
明嘉莱只做原装正品现货 |
询价 |
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